Back to Search
Start Over
Characterization of a copper phosphate triazole metal organic framework material (Cu3PO4(C2N3H2)2OH) and oxygen evolution studies
- Source :
- Materials Science in Semiconductor Processing. 23:144-150
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- The metal organic framework (MOF) Cu3PO4(C2N3H2)2OH, synthesized by hydrothermal route, is characterized physically and photoelectrochemically. The compound crystallizes in a monoclinic symmetry with a layered structure. UV–visible spectroscopy shows an optical transition of 2.58 eV. The thermal variation of the electrical conductivity indicates a semiconducting behavior with a conduction mechanism dominated by small polaron hopping: σ=σ0 exp {0.44 eV/kT} and electron mobility (µ300 K=0.3 cm2 V−1 s−1) thermally activated. The interfacial capacitance at pH ~7 is characteristic of n type behavior with a flat band potential of +0.40 VSCE, an electrons density of 2×1015 cm−3 and a space charge region of 10 µm. The semicircle at high frequencies in the Nyquist plot is not centered on the real axis and the depletion angle (17°) is due to a constant phase element. The impedance data at low frequencies indicate a diffusion-controlled process. As application, the photochemical oxygen evolution is successfully achieved under visible light with a liberation rate of 0.70 cm3 min−1 g−1 and a quantum yield of 0.13%. The reaction ( 2 SO 3 2 − +H2O→ S 2 O 3 2 − +O2+2OH, ΔG0=90.68 kcal mol−1) can be evaluated for the chemical storage.
- Subjects :
- Electron mobility
Materials science
Condensed matter physics
Constant phase element
Mechanical Engineering
Analytical chemistry
Oxygen evolution
Quantum yield
chemistry.chemical_element
Condensed Matter Physics
Polaron
Copper
chemistry
Mechanics of Materials
Electrical resistivity and conductivity
General Materials Science
Nyquist plot
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........12c775564c3607a99322b14b96aa5600