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Thermodynamic design of a high temperature chemical vapor deposition process to synthesize α-SiC in Si-C-H and Si-C-H-Cl systems
- Source :
- Journal of Crystal Growth. 485:78-85
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- In this study, we thermodynamically reviewed the suitable growth process conditions of α-SiC in the Si-C-H system using tetramethylsilane (TMS) and in the Si-C-H-Cl system using methyltrichlorosilane (MTS). In the Si-C-H-Cl system, pure solid SiC was obtained at high temperatures under a larger range of hydrogen dilution ratios than that tolerated in the Si-C-H system. X-ray diffraction and micro-Raman analysis of the products obtained at 1900, 2000, and 2100 °C showed that the α-SiC becomes more dominant with increasing temperature in the Si-C-H-Cl system. While TMS was unsuitable for high temperature processing due to its high C/Si ratio, MTS was found to be appropriate for growing α-SiC crystals at high temperatures under a range of conditions. These results indicate that a novel method to grow α-SiC single crystals through HTCVD using MTS as a precursor could be established.
- Subjects :
- 010302 applied physics
Diffraction
Range (particle radiation)
Hydrogen dilution
Materials science
Analytical chemistry
02 engineering and technology
Chemical vapor deposition
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Process conditions
Methyltrichlorosilane
Inorganic Chemistry
chemistry.chemical_compound
chemistry
Scientific method
0103 physical sciences
Materials Chemistry
0210 nano-technology
Tetramethylsilane
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 485
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........129bb83f59cceeaf2e82eaf8f15c2f71