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Dye sensitization of a large band gap semiconductor by an iron(III) complex

Authors :
Swapan Kumar Moulik
Debabrata Chatterjee
Ravi Kumar Kanaparthi
Lingamallu Giribabu
Source :
Transition Metal Chemistry. 39:641-646
Publication Year :
2014
Publisher :
Springer Science and Business Media LLC, 2014.

Abstract

The Fe(III) complex, [FeIII(HQS)3] (HQS = 8-hydroxyquinoline-5-sulfonic acid), is found to effect sensitization of the large band gap semiconductor, TiO2. The role of interfacial electron transfer in sensitization of TiO2 nanoparticles by surface adsorbed [FeIII(HQS)3] was studied using femtosecond time scale transient absorption spectroscopy. Electron injection has been confirmed by direct detection of the electron in the conduction band. A TiO2-based dye-sensitized solar cell (DSSC) was fabricated using [FeIII(HQS)3] as a sensitizer, and the resulting DSSC exhibited an open-circuit voltage value of 425 mV. The value of the short-circuit photocurrent was found to be 2.5 mA/cm2. The solar to electric power conversion efficiency of the [FeIII(HQS)3] sensitized TiO2-based DSSC device was 0.75 %. The results are discussed in the context of sensitization of TiO2 by other Fe(II)-dye complexes.

Details

ISSN :
1572901X and 03404285
Volume :
39
Database :
OpenAIRE
Journal :
Transition Metal Chemistry
Accession number :
edsair.doi...........125695ac2c763be91dcd2c32bdc8ad0b
Full Text :
https://doi.org/10.1007/s11243-014-9843-8