Back to Search
Start Over
Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation
- Source :
- Japanese Journal of Applied Physics. 47:2097-2102
- Publication Year :
- 2008
- Publisher :
- IOP Publishing, 2008.
-
Abstract
- This paper investigates the random dopant fluctuation of multi-gate metal–oxide–semiconductor field-effect transistors (MOSFETs) using analytical solutions of three-dimensional (3D) Poisson’s equation verified with device simulation. Especially, we analyze the impact of aspect ratio on the random dopant fluctuation in multi-gate devices. Our study indicates that with a given total width, lightly doped fin-type FET (FinFET) shows the smallest threshold voltage (Vth) dispersion because of its smaller Vth sensitivity to the channel doping. For heavily doped devices, quasi-planar shows smaller Vth dispersion because of its larger volume. The Vth dispersion caused by random dopant fluctuation may still be significant in the lightly doped channel, especially for tri-gate and quasi-planar devices. [DOI: 10.1143/JJAP.47.2097]
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Doping
Transistor
General Engineering
General Physics and Astronomy
Aspect ratio (image)
Threshold voltage
law.invention
Condensed Matter::Materials Science
Computer Science::Hardware Architecture
law
Condensed Matter::Superconductivity
Dispersion (optics)
Field-effect transistor
Poisson's equation
Random dopant fluctuation
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........12492257d8f3b1411952f20825c95dfe