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Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon
- Source :
- Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
- Publication Year :
- 1993
- Publisher :
- The Japan Society of Applied Physics, 1993.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........122c93c8a45bdbe06cc3b54088f8ad8b
- Full Text :
- https://doi.org/10.7567/ssdm.1993.pb-1-2