A 2-Watt X-Band FET and Impatt Diode Integrated Amplifier

Authors :: Thomas Chen-Chou Ho
Shiang Fu
Source :: 10th European Microwave Conference, 1980.
Publication Year :: 1980
Publisher :: IEEE, 1980.
Abstract: A practical design and performance of 2 watts, 800 MHz 1-dB bandwidth, GaAs FET and Silicon IMPATT diode integrated amplifier via MIC technique are presented.

Tools