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Assessment of Process-Induced Damage in High-κ Transistors
- Source :
- 2006 IEEE International Conference on IC Design and Technology.
- Publication Year :
- 2006
- Publisher :
- IEEE, 2006.
-
Abstract
- Using a combination of electrical characterization techniques, one can separate contributions from generated and pre-existing electron traps inherent to high-κ dielectrics, as well as identify process-induced effects in the device characteristics.
Details
- Database :
- OpenAIRE
- Journal :
- 2006 IEEE International Conference on IC Design and Technology
- Accession number :
- edsair.doi...........120a6ebea8ba11cd983203897baecec4
- Full Text :
- https://doi.org/10.1109/icicdt.2006.220802