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Ordered porosity for interconnect applications
- Source :
- 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- To lower interconnect signal delay, the industry continues to work on the integration of low-k interlayer dielectrics (ILD). Porosity is often added to further reduce dielectric constant and significantly impact capacitance. These porous dielectric films are most commonly deposited via Chemical Vapor Deposition (CVD), delivering a random order to the pore structure. Disordered films suffer from a reduction in mechanical properties, which ultimately limits the maximum porosity obtained due to film collapse. Control of porosity, pore size distribution and pore geometry is needed to extend the porosity beyond conventional percolation thresholds. Here we present the case study of a periodic mesoporous organosilica (PMO) film. We optimize solution processing to obtain an ordered film and characterize the film porosity, pore size distribution, geometry and mechanical properties. The PMO film is tested in both a dual damascene and replacement back end integration flow.
- Subjects :
- Interconnection
Materials science
Copper interconnect
Percolation threshold
02 engineering and technology
Chemical vapor deposition
Dielectric
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Capacitance
0104 chemical sciences
Mesoporous organosilica
Electronic engineering
Composite material
0210 nano-technology
Porosity
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)
- Accession number :
- edsair.doi...........11daa7d5729324c7f44f34098d1c1512
- Full Text :
- https://doi.org/10.1109/iitc-amc.2016.7507644