Back to Search
Start Over
Nitrogen Plasma Etching and Surface Passivation of GaAs via Plasma-Enhanced Atomic Layer Deposition
- Source :
- Integrated Ferroelectrics. 219:55-61
- Publication Year :
- 2021
- Publisher :
- Informa UK Limited, 2021.
-
Abstract
- We investigated the suitability of aluminum nitride (AlN) for surface passivation and protection of gallium arsenide (GaAs), using a low-temperature passivation method. By varying the plasma power ...
- Subjects :
- Photoluminescence
Materials science
Passivation
business.industry
chemistry.chemical_element
Plasma
Nitride
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Gallium arsenide
chemistry.chemical_compound
Atomic layer deposition
chemistry
Control and Systems Engineering
Aluminium
Etching (microfabrication)
Materials Chemistry
Ceramics and Composites
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 16078489 and 10584587
- Volume :
- 219
- Database :
- OpenAIRE
- Journal :
- Integrated Ferroelectrics
- Accession number :
- edsair.doi...........113e888364bf9af519675e680d5b5831