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Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver

Authors :
Prabir Saha
John D. Cressler
Troy D. England
Pauline Paki-Amouzou
Nelson E. Lourenco
Zachary E. Fleetwood
En Xia Zhang
R.M. Diestelhorst
Adilson S. Cardoso
Cher Xuan Zhang
Duane C. Howard
Subramaniam Shankar
Source :
IEEE Transactions on Nuclear Science. 61:3226-3235
Publication Year :
2014
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2014.

Abstract

An 8-18 GHz receiver implemented in silicon-germanium (SiGe) BiCMOS technology is presented. The receiver is designed to enable built-in test (BIT) and consists of a low noise amplifier (LNA), an image-reject mixer, on-chip, automatic gain control (AGC), ring oscillator (RO) sources (used to provide test signals of a predefined amplitude), and digital-to-analog converters (DACs), used for DC bias control of the blocks. The voltage and current biases of both the LNA and the mixer circuit blocks are used as tuning knobs for radio frequency (RF) performance metrics to mitigate the negative effects of total ionizing dose (TID) radiation damage present in extreme environments such as space. Samples of the receiver die were exposed to 10 keV X-rays at 1, 3, and 6 Mrad( SiO2) doses. The BIT system was able to mitigate for TID damage in most cases, with improvements in the key RF metrics of gain, output third-order intercept point (OIP3), and noise figure (NF). The receiver was fabricated in an 0.18 μm SiGe BiCMOS process technology with a peak fT of 150 GHz and nominally consumes 241-243 mA from a 4 V supply.

Details

ISSN :
15581578 and 00189499
Volume :
61
Database :
OpenAIRE
Journal :
IEEE Transactions on Nuclear Science
Accession number :
edsair.doi...........104c061f81e28c067367ef1e79acfdf4