Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor‐Grownp‐nJunctions

In1−xGaxP laser diodes which emit coherently at 80 °K at wavelengths as short as 6105 A with threshold current densities of 4000–6000 A/cm2 have been fabricated from vapor‐grown In1−xGaxP p‐n junction structures. This is the shortest‐wavelength laser emission and the first example of coherent orange emission yet reported from a semiconductor p‐n junction. From vapor‐grown In1−xGaxP spontaneous‐light‐emitting diodes, external quantum efficiencies in excess of 0.1% have been obtained for orange and red emission at room temperature.