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The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC
- Source :
- Materials Science Forum. 924:253-256
- Publication Year :
- 2018
- Publisher :
- Trans Tech Publications, Ltd., 2018.
-
Abstract
- The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Mechanical Engineering
Photoconductivity
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Crystallographic defect
Mechanics of Materials
0103 physical sciences
Optoelectronics
General Materials Science
0210 nano-technology
business
Semi insulating
Subjects
Details
- ISSN :
- 16629752
- Volume :
- 924
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........0ffae78526b7baf7934518550aaca37d