Barrier thickness dependence of optical properties in GaAs coupled quantum wires

Barrier thickness dependences, namely coupling strength dependences, of optical properties in GaAs coupled quantum wires are investigated by the photoluminescence (PL), photoluminescence excitation (PLE) and radiative lifetime measurements. In the photoluminescence characteristics, the coupled states of symmetric and antisymmetric states are clearly observed with large barrier thickness dependence. Also, the temperature dependence of the radiative lifetime shows a barrier thickness dependence which might be due to the difference of the oscillator strength in the coupled quantum wires with different barrier thicknesses.