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Impact of stress on the recombination at metal precipitates in silicon

Authors :
Gema Martínez-Criado
Wilhelm Warta
Wolfram Kwapil
Friedemann D. Heinz
Manfred Reiche
Paul Gundel
Martin C. Schubert
Eicke R. Weber
Source :
Journal of Applied Physics. 108:103707
Publication Year :
2010
Publisher :
AIP Publishing, 2010.

Abstract

Metals corrupt the performance of silicon solar cells severely. In this paper we investigate the recombination activity of metal precipitates and present a strong positive correlation between their recombination activity and the stress around them, independent of the type of metal forming the precipitate. This fundamental observation suggests that stress, together with the size of the precipitate, has a dominant effect on the recombination activity of metallic precipitates. We explain the recombination enhancing effect of stress near precipitates by the strong piezoresistance of silicon.

Details

ISSN :
10897550 and 00218979
Volume :
108
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........0f86076445d1e155e451d154e149e055
Full Text :
https://doi.org/10.1063/1.3511749