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On the universality of drain-induced-barrier-lowering in field-effect transistors

Authors :
Su-Min Choi
Hyeon-Bhin Jo
Do-Young Yun
Jun-Gyu Kim
Wan-Soo Park
Ji-Min Baek
In-Geun Lee
Jang-Kyoo Shin
Hyuk-Min Kwon
Takuya Tsutsumi
Hiroki Sugiyama
Hideaki Matsuzaki
Jae-Hak Lee
Dae-Hyun Kim
Source :
2022 International Electron Devices Meeting (IEDM).
Publication Year :
2022
Publisher :
IEEE, 2022.

Details

Database :
OpenAIRE
Journal :
2022 International Electron Devices Meeting (IEDM)
Accession number :
edsair.doi...........0f84278c618756b3d94d070bc24a34a4

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