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Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer
- Source :
- Semiconductors. 49:9-12
- Publication Year :
- 2015
- Publisher :
- Pleiades Publishing Ltd, 2015.
-
Abstract
- Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.
- Subjects :
- Photoluminescence
Materials science
Condensed Matter::Other
Annealing (metallurgy)
business.industry
Bilayer
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Laser
Epitaxy
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Transmission electron microscopy
law
Optoelectronics
business
Quantum well
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........0f7b4b5bd5becff9e04d522fd773bce7