Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

MLA

Kung-Ching Liao, et al. “Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport.” Angewandte Chemie, vol. 126, Mar. 2014, pp. 3970–74. EBSCOhost, https://doi.org/10.1002/ange.201308472.

APA

Kung-Ching Liao, Hyo Jae Yoon, Carleen M. Bowers, Felice C. Simeone, & George M. Whitesides. (2014). Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport. Angewandte Chemie, 126, 3970–3974. https://doi.org/10.1002/ange.201308472

Chicago

Kung-Ching Liao, Hyo Jae Yoon, Carleen M. Bowers, Felice C. Simeone, and George M. Whitesides. 2014. “Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport.” Angewandte Chemie 126 (March): 3970–74. doi:10.1002/ange.201308472.