Back to Search
Start Over
Inexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors
- Source :
- Review of Scientific Instruments. 67:4279-4281
- Publication Year :
- 1996
- Publisher :
- AIP Publishing, 1996.
-
Abstract
- A simple and inexpensive circuit to facilitate the direct measurement of capture cross section, when synchronized with a deep level transient spectroscopy system, is described. It avoids the most commonly encountered problem of loading and distortion of the bias (trap filling) pulses of nanosecond duration in the capture cross‐section measurement. The capacitance meter, whose internal circuitry is responsible for the distortion, is connected and disconnected from the rest of the apparatus with the help of simple and low‐cost reed relay switches featuring high operating speed and low contact resistance. Sharp bias pulses as small as 30 ns can successfully be applied to the sample with no observable distortion. Finally, a representative measurement is shown to demonstrate the simplicity and high performance of the circuit.
Details
- ISSN :
- 10897623 and 00346748
- Volume :
- 67
- Database :
- OpenAIRE
- Journal :
- Review of Scientific Instruments
- Accession number :
- edsair.doi...........0f4adbbcf4821aa535f7341a75373b13