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RECENT DEVELOPMENTS IN <font>GaInP/GaAs</font> HETEROJUNCTION BIPOLAR TRANSISTORS

Authors :
Kim Tae
William Liu
Ali Khatibzadeh
E.A. Beam
Source :
International Journal of High Speed Electronics and Systems. :411-471
Publication Year :
1994
Publisher :
World Scientific Pub Co Pte Lt, 1994.

Abstract

We review the recent developments of GaInP/GaAs heterojunction bipolar transistors (HBTs) used for microwave power, low noise, linear amplification and high temperature applications. Special attention is paid in the comparison of the GaInP HBT results with the more conventional AlGaAs HBTs. The material and processing advantages, as well as the electronic and thermal properties of GaInP are described.

Details

ISSN :
17936438 and 01291564
Database :
OpenAIRE
Journal :
International Journal of High Speed Electronics and Systems
Accession number :
edsair.doi...........0f1e099f8de30999466eb163377106b0
Full Text :
https://doi.org/10.1142/s0129156494000188