Characterization and modeling of novel large gate periphery InGaAs/ InAlAs pHEMT for ultra low noise radio astronomy applications

Authors :: Ayman Sobih
Mohamed Abd. El-Azeem
Source :: The International Conference on Electrical Engineering. 6:1-7
Publication Year :: 2008
Publisher :: Egypts Presidential Specialized Council for Education and Scientific Research, 2008.

Subjects :: Materials science
business.industry
Optoelectronics
Ingaas inalas
High-electron-mobility transistor
business
Radio astronomy
Characterization (materials science)
Low noise

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