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Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI
- Source :
- 3DIC
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- A feasibility study for the continuous formation of multi-layer graphene (MLG) on both through-Si-via (TSV) top surface and all through the TSV sidewall and the bottom surface of high-aspect-ratio TSV by thermal chemical vapor deposition (CVD) technique has been carried out. Both microstructural and μ-Raman studies on cross-sectional graphene-TSV samples confirmed that the continuous formation of MLG all along the TSV side wall for the CVD growth temperatures of 650°C and above, and it may be used as thermal TSVs for heat removal in the stacked tiers of 3D-LSI/IC.
Details
- Database :
- OpenAIRE
- Journal :
- 2019 International 3D Systems Integration Conference (3DIC)
- Accession number :
- edsair.doi...........0ed40b391a3c78a1a5d0185a4e3be550