Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

Authors :: Sebastian Walde
Chia-Lung Tsai
Hsueh Hsing Liu
Carsten Netzel
Markus Weyers
Sylvia Hagedorn
Yuh-Renn Wu
Yi Keng Fu
Chia-Yen Huang
Source :: Japanese Journal of Applied Physics. 59:070904
Publication Year :: 2020
Publisher :: IOP Publishing, 2020.

Subjects :: Materials science
Physics and Astronomy (miscellaneous)
Strain (chemistry)
business.industry
Doping
General Engineering
General Physics and Astronomy
Epitaxy
law.invention
Template
law
Optoelectronics
Dislocation
business
Light-emitting diode

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