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Spin-coatable HfO2 resist for optical and electron beam lithographies
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:90-95
- Publication Year :
- 2010
- Publisher :
- American Vacuum Society, 2010.
-
Abstract
- Conventional patterning of HfO2 as a gate dielectric is a multistep complicated process that involves deposition of oxide, photolithography, and hard mask etching. In order to simplify the process of HfO2 patterning, the authors have developed photo- and electron beam-sensitive spin-coatable HfO2 resists for direct writing. They were prepared by reacting hafnium tert-butoxide with benzoylacetone in n-butanol and were found to be highly stable in air. Fourier transform infrared studies suggest that exposure to radiation results in the gradual removal of organic material from the resist and the enrichment of the resist with inorganics. This makes the exposed resist insoluble in organic solvents such as ethanol, thereby providing high-resolution negative patterns as small as ∼10nm wide. A silicon-on-insulator field effect transistor has been fabricated using sol-gel-derived HfO2 resist as a high-k gate dielectric and characterized over a range of temperatures. At room temperature a relatively high gate leaka...
- Subjects :
- Spin coating
Materials science
business.industry
Process Chemistry and Technology
Gate dielectric
Analytical chemistry
chemistry.chemical_element
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Hafnium
law.invention
chemistry
Resist
Etching (microfabrication)
law
Materials Chemistry
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
Photolithography
business
Instrumentation
Electron-beam lithography
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........0ea37a267ba6c9eaf2afe2e169c3aa3f