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Anodically oxidized porous silicon as a substrate for EIS sensors
- Source :
- Materials Science and Engineering: C. 26:232-235
- Publication Year :
- 2006
- Publisher :
- Elsevier BV, 2006.
-
Abstract
- We study the electrochemical response of a field effect capacitor composed by a porous silicon (PS)/silicon dioxide (SiO2) structure as transducer's surface and p-tert-butylcalix[6]arene molecules as a recognizing agent towards nickel ions. Silicon samples were electrochemically anodized in a hydrofluoric acid (HF) electrolyte leading to PS formation. SiO2 layers were obtained by anodic oxidation (AO) of PS in aqueous solution. Electrochemical measurements of the sensor with an Electrolyte/Insulator/Semiconductor (EIS) structure have been performed in the Capacitance/Voltage (C/V) mode. A comparative study of sensor responses depending on AO solutions is presented. We have observed a closer Nernstian response, of the coated and oxidized PS, to the Ni2+ ions that were anodically oxidized in a KNO3 (1 M) solution.
Details
- ISSN :
- 09284931
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Materials Science and Engineering: C
- Accession number :
- edsair.doi...........0e947461611b1125086daca66b60eeba