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Silicon nanocrystal-based photosensor on low-temperature polycrystalline-silicon panels
- Source :
- Applied Physics Letters. 91:051120
- Publication Year :
- 2007
- Publisher :
- AIP Publishing, 2007.
-
Abstract
- A photodetector, comprising a layer of silicon nanocrystals that is sandwiched between two electrodes, is proposed and demonstrated in a photosensing application on low-temperature polysilicon panels. Laser annealing of silicon-rich oxide films can form nanocrystals that respond optimally to a certain absorption spectrum of a light source. These silicon nanocrystals are smaller than 10nm in diameter, which size determines the effectiveness of their quantum confinement, and promote electron-hole pair generation in the photosensing region because of their direct band gap. Besides obtaining a photosensitivity that is comparable to that of a p‐i‐n diode, which is currently used in low-temperature polysilicon technology, the sensor maximizes the photosensing area of a pixel by its stacked structure.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 91
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........0e9036d45e16e1ba83320c00a24c0d76