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3D copper TSV integration, testing and reliability
- Source :
- 2011 International Electron Devices Meeting.
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proximity.
- Subjects :
- Materials science
Integration testing
chemistry.chemical_element
Hardware_PERFORMANCEANDRELIABILITY
Temperature cycling
Copper
Reliability engineering
Stress (mechanics)
Reliability (semiconductor)
chemistry
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Degradation (geology)
Hardware_ARITHMETICANDLOGICSTRUCTURES
Metal gate
Dram
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2011 International Electron Devices Meeting
- Accession number :
- edsair.doi...........0e539b2c203f93525e69ce3527b3369c