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Analysis on the Avalanche Ruggedness of Finger Type and Stripe Type LDMOS Transistor

Authors :
C.J. Kim
T.H. Kwon
C.S. Song
Y.C. Choi
H.S. Kang
Source :
30th European Solid-State Device Research Conference.
Publication Year :
2000
Publisher :
IEEE, 2000.

Subjects

Subjects :
LDMOS
Materials science
Avalanche diode
business.industry
Transistor
Inductor
Avalanche breakdown
law.invention
Single-photon avalanche diode
law
Optoelectronics
business
Diode
Voltage

Details

Database :
OpenAIRE
Journal :
30th European Solid-State Device Research Conference
Accession number :
edsair.doi...........0d503c234577c4b27815f3b240c84680
Full Text :
https://doi.org/10.1109/essderc.2000.194758
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