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IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures
- Source :
- Microelectronics Reliability. 49:1132-1136
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- A calibrated system for power metal reliability analysis in smart power technology chips is presented. This system is mainly designed for temperature evaluation during temperature-cycling experiments. Infrared camera measurements under single shot high energy pulses are correlated with electro-thermal finite element simulation and failure analysis. A special test structure, containing poly-silicon heaters, is used to produce thermal stress. The location of a hot spot agrees well with the position of degraded power metal.
- Subjects :
- In situ
Engineering drawing
Engineering
Infrared
business.industry
Nuclear engineering
Hot spot (veterinary medicine)
Hardware_PERFORMANCEANDRELIABILITY
Temperature cycling
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Finite element method
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Power (physics)
Metal
Reliability (semiconductor)
Hardware_GENERAL
visual_art
Hardware_INTEGRATEDCIRCUITS
visual_art.visual_art_medium
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........0d16135d05b000ab823ff1b5d1896db6