Evaluation of silicon-germanium (SiGe) bipolar technologies for use in an upgraded atlas detector

Authors :: Akil K. Sutton
G. A. Hare
F. M. Newcomer
Abraham Seiden
F. Martinez-Mckinney
S.D. Phillips
S. Rescia
Max Wilder
J. A. Parsons
T. Gadfort
Johnathan S. Rice
A. Jones
W. Kononenko
Miguel Ullan
S. Diez
J.A. Kierstead
Helmuth Spieler
D. Damiani
E. Spencer
Y. Tazawa
John D. Cressler
Gustaaf Brooijmans
J. Metcalfe
Eric A. Wulf
Igor Mandić
Hartmut Sadrozinski
R. W. Hackenburg
Alexander Grillo
Source :: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 604:668-674
Publication Year :: 2009
Publisher :: Elsevier BV, 2009.
Abstract: Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. We have evaluated the relative merits of the latest generations of IBM SiGe HBT BiCMOS technologies, the 8WL and 8HP platforms. These 130 nm SiGe technologies show promise to operate at lower power than do CMOS technologies and would provide a viable alternative for the silicon strip detector and liquid argon calorimeter upgrades, provided that the radiation tolerance studies at multiple gamma and neutron irradiation levels, included in this investigation, show them to be sufficiently radiation tolerant.

ISSN :: 01689002
Volume :: 604
Database :: OpenAIRE
Journal :: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Accession number :: edsair.doi...........0cd6a0a5a19320c741b6d0a038aa8e52
Full Text :: https://doi.org/10.1016/j.nima.2009.03.177

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