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Bi2O3 monolayers from elemental liquid bismuth
- Source :
- Nanoscale. 10:15615-15623
- Publication Year :
- 2018
- Publisher :
- Royal Society of Chemistry (RSC), 2018.
-
Abstract
- Atomically thin, semiconducting transition and post transition metal oxides are emerging as a promising category of materials for high-performance oxide optoelectronic applications. However, the wafer-scale synthesis of crystalline atomically thin samples has been a challenge, particularly for oxides that do not present layered crystal structures. Herein we use a facile, scalable method to synthesise ultrathin bismuth oxide nanosheets using a liquid metal facilitated synthesis approach. Monolayers of α-Bi2O3 featuring sub-nanometre thickness, high crystallinity and large lateral dimensions could be isolated from the liquid bismuth surface. The nanosheets were found to be n-type semiconductors with a direct band gap of ∼3.5 eV and were suited for developing ultra violet (UV) photodetectors. The developed devices featured a high responsivity of ∼400 AW-1 when illuminated with 365 nm UV light and fast response times of ∼70 μs. The developed methods and obtained nanosheets can likely be developed further towards the synthesis of other bismuth based atomically thin chalcogenides that hold promise for electronic, optical and catalytic applications.
- Subjects :
- business.industry
Oxide
chemistry.chemical_element
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Bismuth
Atomic layer deposition
chemistry.chemical_compound
Semiconductor
chemistry
Transition metal
Monolayer
Optoelectronics
General Materials Science
Direct and indirect band gaps
0210 nano-technology
business
Chemical bath deposition
Subjects
Details
- ISSN :
- 20403372 and 20403364
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Nanoscale
- Accession number :
- edsair.doi...........0cbc3b56c9d1846efb9d480570b23a58