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Band-edge-emphasizing photodetector response
- Source :
- IEEE Transactions on Electron Devices. 37:2298-2302
- Publication Year :
- 1990
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1990.
-
Abstract
- A photodetector having a sensitivity only in a narrow-wavelength region has been fabricated by utilizing a thick semi-insulating GaAs (SI GaAs). Because the photon energy at the peak response is nearly equal to the bandgap energy of GaAs, this detector is called a band-edge-emphasizing photodetector. A theory is proposed to explain this phenomenon. Since GaAs is characterized by a short carrier lifetime and a steep change of the absorption coefficient, the active layer is assumed to be composed of two different parts connected in series, which are specified by a function delta . Good agreement has been shown between the experimental and the theoretical results on the sensitivity characteristics. >
- Subjects :
- Materials science
business.industry
Band gap
Physics::Optics
Photodetector
Carrier lifetime
Photon energy
Electronic, Optical and Magnetic Materials
Active layer
Gallium arsenide
Photodiode
law.invention
Condensed Matter::Materials Science
chemistry.chemical_compound
Optics
chemistry
law
Optoelectronics
Electrical and Electronic Engineering
business
Absorption (electromagnetic radiation)
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........0cb61c6fc643b670a275e26934a7458b