Thermochernical understanding of dielectric breakdown in HfSiON with current acceleration

Based on experimental results, the lifetime projection of breakdown and its mechanisms in HfSiON dielectrics were discussed. In HfSiON dielectrics, the total hole fluence to breakdown (Qp) was not found to be a dominant factor. We propose that the thermochemical breakdown along with the acceleration by injected carriers is the primary degradation mechanism in HfSiON dielectrics, especially at high temperature.