Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

MLA

Jun Wang, et al. “Numerical Study of SiC MOSFET With Integrated N-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode.” IEEE Transactions on Electron Devices, vol. 68, Sept. 2021, pp. 4571–76. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........0c931c8604d58ec2600d6240ff3386a1&authtype=sso&custid=ns315887.

APA

Jun Wang, Shiwei Liang, Hangzhi Liu, Hengyu Yu, & Z. John Shen. (2021). Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode. IEEE Transactions on Electron Devices, 68, 4571–4576.

Chicago

Jun Wang, Shiwei Liang, Hangzhi Liu, Hengyu Yu, and Z. John Shen. 2021. “Numerical Study of SiC MOSFET With Integrated N-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode.” IEEE Transactions on Electron Devices 68 (September): 4571–76. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........0c931c8604d58ec2600d6240ff3386a1&authtype=sso&custid=ns315887.