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Improvements on the Design of the Low Saturation Onset Transistor
- Source :
- ICECS
- Publication Year :
- 2020
- Publisher :
- IEEE, 2020.
-
Abstract
- The LSOT (low saturation onset transistor) is a four-transistor network that emulates a MOS device with much lower saturation onset voltage by compensating the reverse saturation component of the drain current through its main transistor. Due to current overcompensation in the structure, the DC output characteristic of the equivalent device may present an undesirable hump. This work presents a methodology to properly size the LSOT leading to a smoother characteristic. Moreover, the addition of a simple switch to automatically cut-off an auxiliary branch of the LSOT structure is also proposed, to allow the use of shorter devices without augmenting overall power.
- Subjects :
- 010302 applied physics
Materials science
020208 electrical & electronic engineering
Transistor
Semiconductor device modeling
02 engineering and technology
01 natural sciences
law.invention
Threshold voltage
law
Control theory
Logic gate
0103 physical sciences
MOSFET
0202 electrical engineering, electronic engineering, information engineering
Drain current
Saturation (magnetic)
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
- Accession number :
- edsair.doi...........0c390df99a171a2643444c2ab001f032
- Full Text :
- https://doi.org/10.1109/icecs49266.2020.9294977