About dislocation and oxygen related luminescence of Si around 0.8 eV

In conjunction with the two-level model the temperature behaviour of the dislocation-related D1-peak follows the T-behaviour of the band gap. Based on luminescence observations in our laboratory and on literature data we propose a ∼30 meV wide domain of the D1 peak. Altogether, the D1-peak position ranges between about 0.76 eV at 300 K and nearly 0.84 eV at a few K. It was shown that the energetic shift for a certain temperature is caused by external electric fields, by excitation level, that affects the intrinsic dislocation field, and by elastic stress. The luminescence of oxygen-related defects / precipitates might be described by a line at ∼ 0.77 eV (P-line) that does not depend on temperature. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)