Intersubband Transitions in Novel Strained Coupled Quantum Wells based on In0.53Ga0.47As Grown by Molecular Beam Epitaxy

Authors :: Toshifumi Hasama
Teruo Mozume
Takasi Simoyama
Hiroshi Ishikawa
Masanori Nagase
Source :: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.
Publication Year :: 2006
Publisher :: IEEE, 2006.
Abstract: InGaAs/AlAs/AlAsSb coupled double quantum wells (CDQWs) have been improved for use in intersubband transition switches. The In content of the well layers was reduced in order to investigate the two-photon absorption in our switches. The crystal quality for In content of 0.53 was deteriorated when compared with the case for In composition of 0.8 due to uncompensated strain by AlAs layers. A new strain-compensation for InGaAs/AlAs/AlAsSb CDQWs was achieved by adjusting the Sb composition of the barrier layers.

Subjects :: Materials science
business.industry
Epitaxy
Two-photon absorption
Gallium arsenide
Crystal
chemistry.chemical_compound
chemistry
Optoelectronics
Absorption (electromagnetic radiation)
Electronic band structure
business
Quantum well
Molecular beam epitaxy

Database :: OpenAIRE
Journal :: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Accession number :: edsair.doi...........0ba4b439ef915486440699b722d85d54
Full Text :: https://doi.org/10.1109/iciprm.2006.1634191

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