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Composition and luminescence of Si and SiO<SUB align='right'>2 layers co-implanted with Ga and N ions
- Source :
- International Journal of Nanotechnology. 14:637
- Publication Year :
- 2017
- Publisher :
- Inderscience Publishers, 2017.
-
Abstract
- With the aim to establish the possibility of synthesis of GaN inclusions by co-implantation of Ga and N ions in silicon and SiO2 films on a silicon substrate, the chemical composition and photoluminescence of implanted layers have been investigated. It is observed that the heavy loss of implanted atoms occurs owing to the out-diffusion (Ga from Si, and Ga and N from SiO2) in the process of post-implantation annealing. Preliminary implantation of nitrogen to form silicon nitride or oxynitride layers is shown to reduce the degree of impurity losses. In the photoluminescence spectrum of both Si and SiO2 subjected to Ga and N co-implantation, the band at 530-550 nm is present, which can be related to 'defect' luminescence of GaN.
- Subjects :
- 010302 applied physics
Photoluminescence
Materials science
Silicon
Annealing (metallurgy)
Inorganic chemistry
Analytical chemistry
chemistry.chemical_element
Bioengineering
Gallium nitride
Strained silicon
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
chemistry.chemical_compound
Silicon nitride
chemistry
Impurity
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
0210 nano-technology
Luminescence
Subjects
Details
- ISSN :
- 17418151 and 14757435
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- International Journal of Nanotechnology
- Accession number :
- edsair.doi...........0b3390e563a46acfc38032a0281a5c4d