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Wearable non-volatile memory devices based on topological insulator Bi2Se3/Pt fibers
- Source :
- Applied Physics Letters. 107:103109
- Publication Year :
- 2015
- Publisher :
- AIP Publishing, 2015.
-
Abstract
- Pt fibers (15 μm) were coated with topological insulator Bi2Se3 nanoplates via a single mode microwave-assisted synthesis technique. With the Bi2Se3/Pt fibers, flexible memory devices were facilely assembled, and they were demonstrated to exhibit rewritable nonvolatile resistive switching characteristics of low switching voltage (−1.2 V and +0.7 V), high ON/OFF current ratio (106), and good retention (4500 s), showing the potential application in data storage. The resistive switching mechanism was analyzed on the bases of formation and rupture of conductive filaments.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
business.industry
Single-mode optical fiber
chemistry.chemical_element
Nanotechnology
Non-volatile memory
chemistry
Resistive switching
Topological insulator
Computer data storage
Optoelectronics
business
Platinum
Electrical conductor
Voltage
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 107
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........0b30da89f02f8d501b726303cc80a8e7