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Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy

Authors :
Jose M. Arias
John H. Dinan
Nibir K. Dhar
J. G. Pasko
M. Zandian
Source :
Applied Physics Letters. 70:1730-1732
Publication Year :
1997
Publisher :
AIP Publishing, 1997.

Abstract

We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1−xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30×30 μm2 junction area had R0A values in the range 1.5×106–1×107Ω cm2 with a uniform cut-off wavelength of 4.65 μm.

Details

ISSN :
10773118 and 00036951
Volume :
70
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........0ad961fd507759f82fe04411a2a5e071
Full Text :
https://doi.org/10.1063/1.118683