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Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy
- Source :
- Applied Physics Letters. 70:1730-1732
- Publication Year :
- 1997
- Publisher :
- AIP Publishing, 1997.
-
Abstract
- We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1−xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30×30 μm2 junction area had R0A values in the range 1.5×106–1×107Ω cm2 with a uniform cut-off wavelength of 4.65 μm.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 70
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........0ad961fd507759f82fe04411a2a5e071
- Full Text :
- https://doi.org/10.1063/1.118683