G′ band Raman lineshape analysis in graphitic foams

In this work we extend the study of the use of Raman spectroscopy to characterize graphitic foams by analyzing the dependence of the G ′ band lineshape on both the excitation laser energy and on the topology of the studied area. The G ′ band lineshape was found to be strongly correlated with the presence of stacking faults. The contribution of the TO + LA combination mode at ∼ 2450 cm −1 to the evaluated skewness includes an excitation energy dependence which needs to be considered. We analyze how to take this effect into consideration, thus obtaining a good evaluation of the dependence of the skewness of the G ′ band on the presence of stacking faults. We also discuss the correlation between the presence of stacking faults and of in plane defects in graphitic foams.