Electroforming Atmospheric Temperature and Annealing Effects on Pt/HfO2/TiO2/HfO2/Pt Resistive Random Access Memory Cell

This work focused on the effects of electroforming ambient temperature and annealing process on the metal oxide multilayer switching resistive random access memory (RRAM) device. We developed Pt/HfO2/TiO2/HfO2/Pt RRAM cells with annealing and without annealing process. Annealed devices are electroformed at a high ambient temperature 80 °C (A-80). Non-annealed devices are electroformed at low atmosphere temperature 25 °C (NA-25). We investigate the outcomes of NA-25 and A-80 devices. Results confirmed that annealed and high ambient temperature formed devices (A-80) contribute to the low operating voltage, improved uniformity, and reliability compared to NA-25 device.