The Reactivity of HCI and Methyltrichlorosilane with Silicon Carbide Surfaces

This work explores the reactivity of HCI and methyltrichlorosilane (MTS) with polycrystalline β-silicon carbide (SiC) surfaces using temperature-programmed desorption (TPD) and Auger electron spectroscopy. HCl is a corrosive gas that inhibits SiC deposition. The results show that HCl is adsorbed by SiC, forming a stable surface chloride that could inhibit SiC deposition. TPD shows that chlorine desorbs as HCI or SiCl4, confirming that HCl can etch SiC surfaces. Desorption is rate-limited by the breaking of Si-Cl bonds. MTS is also adsorbed by SiC; its desorption is similar to that of HCI.