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Resistive Switching Behaviours and Novel Device Applications of Metal-Oxide-Si/Ge Structures
- Source :
- 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- To achieve fab-friendly RRAM, metal-oxide-(Si, SiGe or Ge) structure is a promising device structure. In this paper, we discuss the challenges for developing high performance RRAM with this structure. Resistive-switching layer inserting and interface engineering are proposed for enhancing the device performance. And CMOS compatible Si and Ge-based bipolar RRAM (TiN/Al-doped-HfOx/Si and TiN/HfOx/GeOx/Ge) cells with ultra-low operations current, asymmetric I-V characteristics, good retention behaviors and AC switching properties are also demonstrated. Furthermore, the reported works show that TiN/HfOx/GeOx/Ge structured RRAM cell is very promising for future high performance content addressable memory (CAM) application.
- Subjects :
- Materials science
Silicon
business.industry
Oxide
chemistry.chemical_element
Germanium
Resistive random-access memory
Metal
chemistry.chemical_compound
chemistry
Resistive switching
visual_art
Hardware_INTEGRATEDCIRCUITS
visual_art.visual_art_medium
Optoelectronics
business
Tin
Layer (electronics)
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
- Accession number :
- edsair.doi...........0a6ab64dc0fee46fa97c4ef8affbf1e8