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Quasi-quantitative determination of elemental relationships and surface properties in aqueous aluminium-silicon systems
- Source :
- Journal of Water Process Engineering. 1:54-63
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- Interactions of aluminium (1 mM) and silicon (0.1–2 mM) in aqueous solutions were studied at a low ionic strength medium representing fresh water and water treatment process environments, attempting to quantify elemental relationships of the formed precipitates as well as their surface charge properties with a novel combination of analytical techniques. FESEM analyses showed that the Al:Si ratio in the obtained precipitates was clearly affected by the Al:Si ratio in the initial aqueous solution. According to XRD, the precipitates originated from the 1 mM Al and the 1 mM Al + 0.1 mM Si solutions were gibbsite, while for the initial Al:Si ratios equalling to 1:0.5 or higher, only amorphous material was precipitated. Zeta potential decreased as a function of the initial silicon content, and reached negative values at pH 6.2 with the initial concentrations of 1 mM Al + 2 mM Si. In contrast, for the total surface charge, a maximum value was found between pH 4.5 and 5, and it clearly decreased with the amount of silicon present. To conclude, the dissolved silicon had a significant effect on the formation of charged aluminium species. This may have considerable environmental and health effects. A reaction mechanism for the formation of hydroxyaluminosilicates from silicic acid and aluminium hydroxide was proposed.
- Subjects :
- Aqueous solution
Silicon
Chemistry
Process Chemistry and Technology
Aluminium hydroxide
Inorganic chemistry
chemistry.chemical_element
Amorphous solid
chemistry.chemical_compound
Aluminium
Silicic acid
Surface charge
Safety, Risk, Reliability and Quality
Waste Management and Disposal
Gibbsite
Biotechnology
Subjects
Details
- ISSN :
- 22147144
- Volume :
- 1
- Database :
- OpenAIRE
- Journal :
- Journal of Water Process Engineering
- Accession number :
- edsair.doi...........0a57db3746fd02b185ef31646bf4a3e5