MOVPE Growth of AlInP–InGaP Distributed Bragg Reflectors

This article discusses metal–organic vapor phase epitaxy growth of all-phosphide (AlInP–InGaP) distributed Bragg reflectors (DBRs) and their applications for thin flexible multijunction solar cell devices. DBRs with a peak reflectance of 884 nm—close to the GaAs bandgap energy—were grown. This all-phosphide DBR was monolithically integrated with a dual-junction (DJ) InGaP/GaAs solar cell. The DJ cell with a DBR exhibited a 3% increase in short-circuit current density ( J sc), in comparison with the DJ without a DBR. Both open-circuit voltage ( V oc) and fill factor ( FF) values of the solar cell did not change with the DBR integration.