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High-Performance Bilayer WSe2 pFET with Record Ids = 425 μA/μm and Gm = 100 at μS/μm Vds = -1 V By Direct Growth and Fabrication on SiO2 Substrate

Authors :
Xinhang Shi
Xin Wang
Shiyuan Liu
Qi Guo
Lei Sun
Xuefei Li
Ru Huang
Yanqing Wu
Source :
2022 International Electron Devices Meeting (IEDM).
Publication Year :
2022
Publisher :
IEEE, 2022.

Details

Database :
OpenAIRE
Journal :
2022 International Electron Devices Meeting (IEDM)
Accession number :
edsair.doi...........09b2dbf8b6a23dfa6eac985d2543afeb

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