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Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression
- Source :
- Japanese Journal of Applied Physics. 58:090502
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........09718c931644f758f34ca0199e9264ca