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Fast photoconductive GaAs detectors made by laser stimulated MOCVD
- Source :
- Electronics Letters. 19:142
- Publication Year :
- 1983
- Publisher :
- Institution of Engineering and Technology (IET), 1983.
-
Abstract
- Photoconductive detectors with rise times less than 10 ps have been made from GaAs grown by laser-stimulated MOCVD. The growth temperature was 450°C, and laser pulse energy and pulse repetition frequency were 120 mJ and 10 Hz, respectively.
- Subjects :
- Pulse repetition frequency
Materials science
business.industry
Photoconductivity
Photodetector
Semiconductor device
Chemical vapor deposition
Laser
law.invention
Gallium arsenide
chemistry.chemical_compound
Optics
chemistry
law
Optoelectronics
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 00135194
- Volume :
- 19
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi...........0969e31724dcb3dc190b8c3571fe0b15
- Full Text :
- https://doi.org/10.1049/el:19830100