Paramagnetic properties of single-crystal silicon implanted with iron-group transition metals

Samples of single-crystal silicon implanted with iron-group ions are investigated by electron paramagnetic resonance (EPR). The change in relative permittivity μr of the silicon layer modified by implanted nickel ions is found. The accumulation kinetics of paramagnetic centers of amorphous regions of silicon implanted with Co, Ni, and Fe are shown to be different. Magnetic hysteresis for both the wide EPR line due to implanted impurities and the EPR line due to dangling chemical silicon bonds is found.