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Suppression of Phosphorous Out-Diffusion in PH3 Plasma Immersion Ion-Implanted Germanium Epilayer Grown on Silicon (100) Substrate through SiOx Capping Layer
- Source :
- MATERIALS TRANSACTIONS. 61:195-199
- Publication Year :
- 2020
- Publisher :
- Japan Institute of Metals, 2020.
Details
- ISSN :
- 13475320 and 13459678
- Volume :
- 61
- Database :
- OpenAIRE
- Journal :
- MATERIALS TRANSACTIONS
- Accession number :
- edsair.doi...........09136fd9794128ba28a08aab5803edc1